Livoa LogoLivoa
Sic substrate
GaN buffer, 2 μm - 1x1018 (Carbon doping)
GaN channel, 300 nm
AlN inter layer, 1 nm
Al0.25Ga0.75N barrier layer, 20 nm
Mg doped, P-GaN Cap layer, 75 nm
Source
Drain
Si3N4 Passivation, 240 nm
Oxide - Al2O3 (10 nm) / HF AlOx
Lgs = 1 μm
Lss = 0.5 μm
Lg = 0.8 μm
Ld = 0.5 μm
5 μm
Id, gm, VBD, ft/fmax, Cgg
Gate (Pi-gate)

DC and RF Analysis of Gan HEMT device structure

by Dhanya

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